1. IR @ Gulbarga University
  2. Faculty Publications
  3. 1. Journal Articles
Please use this identifier to cite or link to this item: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/5798
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSuresha K
dc.contributor.authorNaik P.S.
dc.date.accessioned2020-06-12T15:08:51Z-
dc.date.available2020-06-12T15:08:51Z-
dc.date.issued2001
dc.identifier.citationPhysics of Low-Dimensional Structures , Vol. 2001 , 44084 , p. 39 - 48en_US
dc.identifier.urihttp://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/5798-
dc.description.abstractWe have calculated the energy loss per electron via acoustic phonons assuming degenerate statistics for two-dimensional (2D) hot electron gas of silicon inversion layer of MOSFET structure in the electron temperature range 0.15K&lten_US
dc.publisher1.7K. It is found that the energy loss rates from the electron-phonon interaction are proportional to T5 for the screened case. At low temperatures our results are in good agreement with those obtained from recent experimental data.
dc.subjectTe &lt
dc.titleEnergy Loss Rates in Silicon Inversion Layer of MOSFET Structureen_US
Appears in Collections:1. Journal Articles

Files in This Item:
There are no files associated with this item.
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.