Please use this identifier to cite or link to this item: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/5798
Title: Energy Loss Rates in Silicon Inversion Layer of MOSFET Structure
Authors: Suresha K
Naik P.S.
Keywords: Te &lt
Issue Date: 2001
Publisher: 1.7K. It is found that the energy loss rates from the electron-phonon interaction are proportional to T5 for the screened case. At low temperatures our results are in good agreement with those obtained from recent experimental data.
Citation: Physics of Low-Dimensional Structures , Vol. 2001 , 44084 , p. 39 - 48
Abstract: We have calculated the energy loss per electron via acoustic phonons assuming degenerate statistics for two-dimensional (2D) hot electron gas of silicon inversion layer of MOSFET structure in the electron temperature range 0.15K&lt
URI: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/5798
Appears in Collections:1. Journal Articles

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