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Title: | Energy Loss Rates in Silicon Inversion Layer of MOSFET Structure |
Authors: | Suresha K Naik P.S. |
Keywords: | Te < |
Issue Date: | 2001 |
Publisher: | 1.7K. It is found that the energy loss rates from the electron-phonon interaction are proportional to T5 for the screened case. At low temperatures our results are in good agreement with those obtained from recent experimental data. |
Citation: | Physics of Low-Dimensional Structures , Vol. 2001 , 44084 , p. 39 - 48 |
Abstract: | We have calculated the energy loss per electron via acoustic phonons assuming degenerate statistics for two-dimensional (2D) hot electron gas of silicon inversion layer of MOSFET structure in the electron temperature range 0.15K< |
URI: | http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/5798 |
Appears in Collections: | 1. Journal Articles |
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