Phonon instabiliy and its implications on electronic transport processes in semiconductor heterojunctions

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DC Field	Value	Language
dc.contributor.author	Naik, PS
dc.contributor.author	Krishanamurthy, BS
dc.date.accessioned	2020-06-12T15:06:28Z	-
dc.date.available	2020-06-12T15:06:28Z	-
dc.date.issued	2004
dc.identifier.citation	PHYSICS OF LOW-DIMENSIONAL STRUCTURES , Vol. 43894 , , p. 1 - 15	en_US
dc.identifier.uri	http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/5199	-
dc.description.abstract	The possibility of the acoustic phonon instability at low temperatures has been investigated, using the Phonon Boltzmann Transport Equation (PBTE), where the acoustic phonons are dominant. The obtained solution from the rate equation for non-equilibrium acoustic phonon has been employed for the calculations of electron energy loss rate, transport parameters and these agree well with the recently reported experimental and theoretical data for single quantum well provided by GaAs/GaxAl1-xAs heterojunctions structure.	en_US
dc.publisher	V S V CO. LTD
dc.title	Phonon instabiliy and its implications on electronic transport processes in semiconductor heterojunctions	en_US
dc.type	Article
Appears in Collections:	1. Journal Articles

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