Phonon instabiliy and its implications on electronic transport processes in semiconductor heterojunctions

Abstract

The possibility of the acoustic phonon instability at low temperatures has been investigated, using the Phonon Boltzmann Transport Equation (PBTE), where the acoustic phonons are dominant. The obtained solution from the rate equation for non-equilibrium acoustic phonon has been employed for the calculations of electron energy loss rate, transport parameters and these agree well with the recently reported experimental and theoretical data for single quantum well provided by GaAs/GaxAl1-xAs heterojunctions structure.