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dc.contributor.authorRabinal M.K
dc.contributor.authorMulimani B.G.
dc.date.accessioned2020-06-12T15:05:57Z-
dc.date.available2020-06-12T15:05:57Z-
dc.date.issued2007
dc.identifier.citationNew Journal of Physics , Vol. 9 , , p. -en_US
dc.identifier.uri10.1088/1367-2630/9/12/440
dc.identifier.urihttp://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/5008-
dc.description.abstract1-Dodecyne organic molecules (OMs) were chemically bonded to porous silicon (PS) to constitute Si-PS-OMs-metal (M) junctions. PS, which is highly susceptible to atmospheric contamination, becomes stable upon chemical passivation of its surface atoms. Current-voltage curves were studied to understand the charge transport properties, and these measurements indicate clearly that organic passivation unpins the Fermi-level at the PS-M interface. It was believed earlier that Si-PS is the only important interface that controls charge transport in these junctions. We observe that both PS-M and Si-PS interfaces are equally important in influencing the junction parameters when surface states are passivated. The results are discussed in terms of energy band diagrams of these junctions. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.en_US
dc.titleTransport properties of molecularly stabilized porous silicon schottky junctionsen_US
dc.typeArticle
Appears in Collections:1. Journal Articles

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