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DC Field | Value | Language |
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dc.contributor.author | Rabinal M.K | |
dc.contributor.author | Mulimani B.G. | |
dc.date.accessioned | 2020-06-12T15:05:57Z | - |
dc.date.available | 2020-06-12T15:05:57Z | - |
dc.date.issued | 2007 | |
dc.identifier.citation | New Journal of Physics , Vol. 9 , , p. - | en_US |
dc.identifier.uri | 10.1088/1367-2630/9/12/440 | |
dc.identifier.uri | http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/5008 | - |
dc.description.abstract | 1-Dodecyne organic molecules (OMs) were chemically bonded to porous silicon (PS) to constitute Si-PS-OMs-metal (M) junctions. PS, which is highly susceptible to atmospheric contamination, becomes stable upon chemical passivation of its surface atoms. Current-voltage curves were studied to understand the charge transport properties, and these measurements indicate clearly that organic passivation unpins the Fermi-level at the PS-M interface. It was believed earlier that Si-PS is the only important interface that controls charge transport in these junctions. We observe that both PS-M and Si-PS interfaces are equally important in influencing the junction parameters when surface states are passivated. The results are discussed in terms of energy band diagrams of these junctions. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. | en_US |
dc.title | Transport properties of molecularly stabilized porous silicon schottky junctions | en_US |
dc.type | Article | |
Appears in Collections: | 1. Journal Articles |
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