Transport properties of molecularly stabilized porous silicon schottky junctions

Abstract

1-Dodecyne organic molecules (OMs) were chemically bonded to porous silicon (PS) to constitute Si-PS-OMs-metal (M) junctions. PS, which is highly susceptible to atmospheric contamination, becomes stable upon chemical passivation of its surface atoms. Current-voltage curves were studied to understand the charge transport properties, and these measurements indicate clearly that organic passivation unpins the Fermi-level at the PS-M interface. It was believed earlier that Si-PS is the only important interface that controls charge transport in these junctions. We observe that both PS-M and Si-PS interfaces are equally important in influencing the junction parameters when surface states are passivated. The results are discussed in terms of energy band diagrams of these junctions. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.