Please use this identifier to cite or link to this item: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/4846
Full metadata record
DC FieldValueLanguage
dc.contributor.authorHiremath R.K
dc.contributor.authorRabinal M.K
dc.contributor.authorMulimani B.G
dc.contributor.authorKhazi I.M.
dc.date.accessioned2020-06-12T15:05:25Z-
dc.date.available2020-06-12T15:05:25Z-
dc.date.issued2008
dc.identifier.citationLangmuir , Vol. 24 , 19 , p. 11300 - 11306en_US
dc.identifier.uri10.1021/la800882e
dc.identifier.urihttp://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/4846-
dc.description.abstractSilicon surface was chemically modified by covalent attachment of homologous organic molecules having different dipole moments. Surface photovoltage measurements clearly confirm that organic molecules have a profound effect on surface band bending of semiconductor. Metal-molecules-silicon junctions were constituted for molecules belonging to ethynylbenzene series using soft mercury contact. These junctions show a systematic change in the electrical charge transport with dipole moment of molecules. Parameters such as ideality factor, barrier height, and density of interface states of various junctions are estimated to understand the role of organic molecules. These studies offer the prospect to develop molecular electronics, which may find potential applications in solar cells and chemical and biological sensors. © 2008 American Chemical Society.en_US
dc.titleMolecularly controlled metal-semiconductor junctions on silicon surface: A dipole effecten_US
dc.typeArticle
Appears in Collections:1. Journal Articles

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.