Please use this identifier to cite or link to this item: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/4577
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dc.contributor.authorVaidya R.G
dc.contributor.authorKamatagi M.D
dc.contributor.authorSankeshwar N.S
dc.contributor.authorMulimani B.G.
dc.date.accessioned2020-06-12T15:04:14Z-
dc.date.available2020-06-12T15:04:14Z-
dc.date.issued2010
dc.identifier.citationSemiconductor Science and Technology , Vol. 25 , 9 , p. -en_US
dc.identifier.uri10.1088/0268-1242/25/9/092001
dc.identifier.urihttp://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/4577-
dc.description.abstractThe diffusion thermopower of graphene, Sd , is studied for 30 < T < 300 K, considering the electrons to be scattered by impurities, vacancies, surface roughness and acoustic and optical phonons via deformation potential couplings. Sd is found to increase almost linearly with temperature, determined mainly by vacancy and impurity scatterings. A departure from linear behaviour due to optical phonons is noticed. As a function of carrier concentration, a change in the sign of |Sd | is observed. Our analysis of recent thermopower data obtains a good fit. The limitations of Mott formula are discussed. Detailed analysis of data will enable a better understanding of the scattering mechanisms operative in graphene. © 2010 IOP Publishing Ltd.en_US
dc.titleDiffusion thermopower in grapheneen_US
dc.typeArticle
Appears in Collections:1. Journal Articles

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