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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sagar, R | |
dc.contributor.author | Madolappa, S | |
dc.contributor.author | Raibagkar, RL | |
dc.date.accessioned | 2020-06-12T15:03:54Z | - |
dc.date.available | 2020-06-12T15:03:54Z | - |
dc.date.issued | 2011 | |
dc.identifier.citation | INTEGRATED FERROELECTRICS , Vol. 130 , , p. 21 - 26 | en_US |
dc.identifier.uri | 10.1080/10584587.2011.621753 | |
dc.identifier.uri | http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/4433 | - |
dc.description.abstract | Cerium (Ce) doped Ba(Zr0.52Ti0.48)O-3 were prepared by conventional solid state reaction method. The frequency dependence dielectric behaviors were studied from 50 degrees C temperatures to 400 degrees C. Dielectric properties showed the low loss (tan delta) behavior. The frequency dependent dielectric constant (epsilon') exhibited moderate values. Impedance studies (Z') showed superior electrical behavior within the samples. | en_US |
dc.publisher | TAYLOR & FRANCIS LTD | |
dc.subject | Ce-doping | |
dc.subject | low loss | |
dc.subject | dielectric constant | |
dc.subject | impedance measurement | |
dc.title | Dielectric and Impedance Studies of Ce-Doped Ba(Zr0.52Ti0.48)O-3 | en_US |
dc.type | Article | |
Appears in Collections: | 1. Journal Articles |
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