Please use this identifier to cite or link to this item: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/4364
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dc.contributor.authorMadolappa, S
dc.contributor.authorSagar, R
dc.contributor.authorSharanappa, N
dc.contributor.authorRaibagkar, RL
dc.date.accessioned2020-06-12T15:03:40Z-
dc.date.available2020-06-12T15:03:40Z-
dc.date.issued2012
dc.identifier.citationFERROELECTRICS LETTERS SECTION , Vol. 39 , 43833 , p. 20 - 24en_US
dc.identifier.uri10.1080/07315171.2012.707032
dc.identifier.urihttp://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/4364-
dc.description.abstractPositive temperature coefficient resistance (PTCR) materials of Gd and Cr co-doped BaTiO3 ceramics were prepared by well known solid state reaction method. Temperature dependent electrical studies were performed in the temperature range from 300 K to 673 K. Curie temperature of the samples are around 345 K to 385 K. Resistivity was maximum at low temperature and decreases as the temperature increases confirming the semiconducting behavior and PTCR property of the synthesized nano-sized compounds. Thermoelectric properties demonstrated n-type semiconductor characteristics from room temperature to 673 K.en_US
dc.publisherTAYLOR & FRANCIS LTD
dc.subjectGd and Cr co-doping
dc.subjectceramic technique
dc.subjectXRD
dc.subjectPTCR and Seebeck coefficient
dc.titlePTCR and Thermoelectric Properties of Isovalent Co-Doped BaTiO3 Nanoceramicsen_US
dc.typeArticle
Appears in Collections:1. Journal Articles

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