Indium nitride (InN) nanostructures grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE)

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DC Field	Value	Language
dc.contributor.author	Sinha N
dc.contributor.author	Jali V.M
dc.contributor.author	Bhat T.N
dc.contributor.author	Roul B
dc.contributor.author	Kumar M
dc.contributor.author	Rajpalke M.K
dc.contributor.author	Krupanidhi S.B.
dc.date.accessioned	2020-06-12T15:01:04Z	-
dc.date.available	2020-06-12T15:01:04Z	-
dc.date.issued	2011
dc.identifier.citation	AIP Conference Proceedings , Vol. 1393 , , p. 77 - 78	en_US
dc.identifier.uri	10.1063/1.3653617
dc.identifier.uri	http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3651	-
dc.description.abstract	Indium nitride (InN) is an interesting and potentially important semiconductor material with superior electronic transport properties. Compared to all other group III-nitrides, InN possesses the lowest effective mass, the highest mobility, the highest saturation velocity and narrow band gap of 0.7-0.9 eV. The present paper deals with the fabrication of InN nanostructures on silicon and sapphire substrates by plasma-assisted molecular beam epitaxy. The droplet epitaxy and Stranski-Krastanov(S-K) growth modes were used to grow the nanostructures. © 2011 American Institute of Physics.	en_US
dc.subject	Indium Nitride
dc.subject	Nanostructures
dc.subject	PAMBE
dc.subject	Photoluminescence
dc.title	Indium nitride (InN) nanostructures grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE)	en_US
dc.type	Conference Paper
Appears in Collections:	2. Conference Papers

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