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Title: | Diffusion thermopower in graphene |
Authors: | Vaidya R.G Kamatagi M.D Sankeshwar N.S Mulimani B.G. |
Keywords: | Graphene thermopower |
Issue Date: | 2011 |
Citation: | AIP Conference Proceedings , Vol. 1399 , , p. 751 - 752 |
Abstract: | The diffusion thermopower, S d, in graphene is studied for T<300K. The electron scattering mechanisms considered are those by impurities, vacancies, surface roughness, and acoustic and optical phonons via deformation potential couplings. Numerical calculations of S d performed using the semiclassical Mott relation show S d to increase almost linearly with temperature and to be determined mainly by vacancy and impurity scatterings. As function of carrier concentration, a change in sign of S d is observed. Our preliminary analysis of recent thermopower data obtains a good fit. A detailed analysis of data will provide a better understanding of electron-phonon interaction in graphene. © 2011 American Institute of Physics. |
URI: | 10.1063/1.3666594 http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3644 |
Appears in Collections: | 2. Conference Papers |
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