Please use this identifier to cite or link to this item: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3644
Title: Diffusion thermopower in graphene
Authors: Vaidya R.G
Kamatagi M.D
Sankeshwar N.S
Mulimani B.G.
Keywords: Graphene
thermopower
Issue Date: 2011
Citation: AIP Conference Proceedings , Vol. 1399 , , p. 751 - 752
Abstract: The diffusion thermopower, S d, in graphene is studied for T<300K. The electron scattering mechanisms considered are those by impurities, vacancies, surface roughness, and acoustic and optical phonons via deformation potential couplings. Numerical calculations of S d performed using the semiclassical Mott relation show S d to increase almost linearly with temperature and to be determined mainly by vacancy and impurity scatterings. As function of carrier concentration, a change in sign of S d is observed. Our preliminary analysis of recent thermopower data obtains a good fit. A detailed analysis of data will provide a better understanding of electron-phonon interaction in graphene. © 2011 American Institute of Physics.
URI: 10.1063/1.3666594
http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3644
Appears in Collections:2. Conference Papers

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