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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Vaidya R.G | |
dc.contributor.author | Kamatagi M.D | |
dc.contributor.author | Sankeshwar N.S | |
dc.contributor.author | Mulimani B.G. | |
dc.date.accessioned | 2020-06-12T15:01:03Z | - |
dc.date.available | 2020-06-12T15:01:03Z | - |
dc.date.issued | 2011 | |
dc.identifier.citation | AIP Conference Proceedings , Vol. 1399 , , p. 751 - 752 | en_US |
dc.identifier.uri | 10.1063/1.3666594 | |
dc.identifier.uri | http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3644 | - |
dc.description.abstract | The diffusion thermopower, S d, in graphene is studied for T<300K. The electron scattering mechanisms considered are those by impurities, vacancies, surface roughness, and acoustic and optical phonons via deformation potential couplings. Numerical calculations of S d performed using the semiclassical Mott relation show S d to increase almost linearly with temperature and to be determined mainly by vacancy and impurity scatterings. As function of carrier concentration, a change in sign of S d is observed. Our preliminary analysis of recent thermopower data obtains a good fit. A detailed analysis of data will provide a better understanding of electron-phonon interaction in graphene. © 2011 American Institute of Physics. | en_US |
dc.subject | Graphene | |
dc.subject | thermopower | |
dc.title | Diffusion thermopower in graphene | en_US |
dc.type | Conference Paper | |
Appears in Collections: | 2. Conference Papers |
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