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dc.contributor.authorVaidya R.G
dc.contributor.authorKamatagi M.D
dc.contributor.authorSankeshwar N.S
dc.contributor.authorMulimani B.G.
dc.date.accessioned2020-06-12T15:01:03Z-
dc.date.available2020-06-12T15:01:03Z-
dc.date.issued2011
dc.identifier.citationAIP Conference Proceedings , Vol. 1399 , , p. 751 - 752en_US
dc.identifier.uri10.1063/1.3666594
dc.identifier.urihttp://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3644-
dc.description.abstractThe diffusion thermopower, S d, in graphene is studied for T<300K. The electron scattering mechanisms considered are those by impurities, vacancies, surface roughness, and acoustic and optical phonons via deformation potential couplings. Numerical calculations of S d performed using the semiclassical Mott relation show S d to increase almost linearly with temperature and to be determined mainly by vacancy and impurity scatterings. As function of carrier concentration, a change in sign of S d is observed. Our preliminary analysis of recent thermopower data obtains a good fit. A detailed analysis of data will provide a better understanding of electron-phonon interaction in graphene. © 2011 American Institute of Physics.en_US
dc.subjectGraphene
dc.subjectthermopower
dc.titleDiffusion thermopower in grapheneen_US
dc.typeConference Paper
Appears in Collections:2. Conference Papers

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