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DC Field | Value | Language |
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dc.contributor.author | Biradar B | |
dc.contributor.author | Jali V.M | |
dc.contributor.author | Murali B | |
dc.contributor.author | Krupanidhi S.B | |
dc.contributor.author | Sanjeev G. | |
dc.date.accessioned | 2020-06-12T15:01:02Z | - |
dc.date.available | 2020-06-12T15:01:02Z | - |
dc.date.issued | 2013 | |
dc.identifier.citation | Advanced Materials Research , Vol. 699 , , p. 257 - 261 | en_US |
dc.identifier.uri | 10.4028/www.scientific.net/AMR.699.257 | |
dc.identifier.uri | http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3613 | - |
dc.description.abstract | The effects of 8 MeV electron irradiation (with variable fluence) on the electrical and optical properties of Lithium doped Zinc oxide thin films prepared by sol-gel synthesis are reported. There is a decrease in crystallinity and crystallite size with increase in fluence, as confirmed by XRD and SEM. We observe a decrease in transmittance, band gap and refractive index, while there is an increase in the extension coefficient with the fluence. I-V measurements have shown a decrease in leakage current and interestingly, the metal-semiconductor-metal (M-S-M) device shows only the ohmic behavior after irradiation. © (2013) Trans Tech Publications, Switzerland. | en_US |
dc.subject | Electrical | |
dc.subject | Electron irradiation | |
dc.subject | Optical | |
dc.subject | Sol-gel | |
dc.subject | ZnO: Li thin films | |
dc.title | Electrical and optical properties of electron irradiated ZnO: Li thin films | en_US |
dc.type | Conference Paper | |
Appears in Collections: | 2. Conference Papers |
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