Please use this identifier to cite or link to this item: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/4433
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dc.contributor.authorSagar, R
dc.contributor.authorMadolappa, S
dc.contributor.authorRaibagkar, RL
dc.date.accessioned2020-06-12T15:03:54Z-
dc.date.available2020-06-12T15:03:54Z-
dc.date.issued2011
dc.identifier.citationINTEGRATED FERROELECTRICS , Vol. 130 , , p. 21 - 26en_US
dc.identifier.uri10.1080/10584587.2011.621753
dc.identifier.urihttp://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/4433-
dc.description.abstractCerium (Ce) doped Ba(Zr0.52Ti0.48)O-3 were prepared by conventional solid state reaction method. The frequency dependence dielectric behaviors were studied from 50 degrees C temperatures to 400 degrees C. Dielectric properties showed the low loss (tan delta) behavior. The frequency dependent dielectric constant (epsilon') exhibited moderate values. Impedance studies (Z') showed superior electrical behavior within the samples.en_US
dc.publisherTAYLOR & FRANCIS LTD
dc.subjectCe-doping
dc.subjectlow loss
dc.subjectdielectric constant
dc.subjectimpedance measurement
dc.titleDielectric and Impedance Studies of Ce-Doped Ba(Zr0.52Ti0.48)O-3en_US
dc.typeArticle
Appears in Collections:1. Journal Articles

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