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Please use this identifier to cite or link to this item: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3736
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dc.contributor.authorKubakaddi S.S
dc.contributor.authorSuresha K
dc.contributor.authorMulimani B.G.
dc.date.accessioned2020-06-12T15:01:11Z-
dc.date.available2020-06-12T15:01:11Z-
dc.date.issued2002
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering , Vol. 4746 I , , p. 360 - 363en_US
dc.identifier.urihttp://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3736-
dc.description.abstractThe energy relaxation rate of hot electrons has been studied in GaAs/AlGaAs quantum wells. Calculations are presented by taking into account the electron-two-zone edge transverse acoustic phonon interaction besides the usual one-phonon mechanisms. The good agreement with the experimental observations over a wide electron temperature range (3K<Te<120K) demonstrates the necessity of incorporating the electron-two-phonon processes in power loss from electrons.en_US
dc.titlePower loss in two-dimensional electron gas due to 2TA phononsen_US
dc.typeConference Paper
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