Please use this identifier to cite or link to this item: http://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3613
Full metadata record
DC FieldValueLanguage
dc.contributor.authorBiradar B
dc.contributor.authorJali V.M
dc.contributor.authorMurali B
dc.contributor.authorKrupanidhi S.B
dc.contributor.authorSanjeev G.
dc.date.accessioned2020-06-12T15:01:02Z-
dc.date.available2020-06-12T15:01:02Z-
dc.date.issued2013
dc.identifier.citationAdvanced Materials Research , Vol. 699 , , p. 257 - 261en_US
dc.identifier.uri10.4028/www.scientific.net/AMR.699.257
dc.identifier.urihttp://gukir.inflibnet.ac.in:8080/jspui/handle/123456789/3613-
dc.description.abstractThe effects of 8 MeV electron irradiation (with variable fluence) on the electrical and optical properties of Lithium doped Zinc oxide thin films prepared by sol-gel synthesis are reported. There is a decrease in crystallinity and crystallite size with increase in fluence, as confirmed by XRD and SEM. We observe a decrease in transmittance, band gap and refractive index, while there is an increase in the extension coefficient with the fluence. I-V measurements have shown a decrease in leakage current and interestingly, the metal-semiconductor-metal (M-S-M) device shows only the ohmic behavior after irradiation. © (2013) Trans Tech Publications, Switzerland.en_US
dc.subjectElectrical
dc.subjectElectron irradiation
dc.subjectOptical
dc.subjectSol-gel
dc.subjectZnO: Li thin films
dc.titleElectrical and optical properties of electron irradiated ZnO: Li thin filmsen_US
dc.typeConference Paper
Appears in Collections:2. Conference Papers

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.